Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Breakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts

In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate Citation

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

This paper presents a new method of passivation control by electroluminescence (EL) in 0.15 lm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W = 1 · 100 lm), and eight fingers ones (W = 8 · 125 lm), is modified by defects located at the passivation/semiconductor interface and is characterized by a light emission along the drain contact. This abnormal emission reveals so...

High Performance InAlN/GaN HEMTs on SiC Substrate

In this work, we study the scaling characteristics of In0.17Al0.83N/GaN high electron mobility transistors (HEMTs). Scaling of both the DC and RF performance are studied as a function of InAlN thickness, gate recess and gate length to explore the design space of high frequency InAlN/GaN devices. Surface passivation by Al2O3 deposited using atomic layer deposition (ALD) is also investigated as a...